- 产品型号 IMT65R039M1HXUMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SILICON CARBIDE MOSFET
- 分类 单 FET、MOSFET
-
PDF
- 库存 3498
- 2000 6.59
技术参数
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-HSOF-8-2
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Drain to Source Voltage (Vdss) 650 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 2 (1 Year)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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