技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max) 700µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V
• Frequency - Transition 2.5MHz
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 15 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 115 W
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected