技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 135mA, 400mA
• Current - Collector Cutoff (Max) 250µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 400mA, 5V
• Supplier Device Package TO-92AP
• Current - Collector (Ic) (Max) 750 mA
• Voltage - Collector Emitter Breakdown (Max) 400 V
• Power - Max 950 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant