技术参数

• Package / Case TO-78-6 Metal Can
• Mounting Type Through Hole
• Transistor Type 2 PNP (Dual)
• Operating Temperature -65°C ~ 200°C (TJ)
• Power - Max 350mW
• Current - Collector (Ic) (Max) 50mA
• Voltage - Collector Emitter Breakdown (Max) 60V
• Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max) 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
• Supplier Device Package TO-78-6
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected