技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 600mA, 3A
• Current - Collector Cutoff (Max) 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 5V
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 5 A
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 1.2 W
• HTSUS 8541.21.0040
• REACH Status REACH Unaffected