技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
• Rds On (Max) @ Id, Vgs 44mOhm @ 2A, 4.5V
• Power Dissipation (Max) 830mW
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package SOT-23-3
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds 118 pF @ 10 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant