技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Transistor Type 1 NPN, 1 PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Power - Max 1.47W
• Current - Collector (Ic) (Max) 3A
• Voltage - Collector Emitter Breakdown (Max) 100V
• Vce Saturation (Max) @ Ib, Ic 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 10V / 170 @ 500mA, 10V
• Frequency - Transition 130MHz, 100MHz
• Supplier Device Package PowerDI5060-8 (Type UXD)
• ECCN EAR99
• HTSUS 8541.29.0075
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant