技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Rds On (Max) @ Id, Vgs 83mOhm @ 4.4A, 10V
• Power Dissipation (Max) 2.2W (Ta)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type UX)
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 27.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1808 pF @ 50 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant