- 产品型号 K4B4G1646E-BYK000
- 品牌 Samsung Semiconductor
- RoHS Yes
- 描述 DDR3-1600 4GB (256MX16)1.25NS CL
- 分类 记忆
- 库存 3453
定价:
- 1 2.9
技术参数
- Package / Case 96-TFBGA
- Mounting Type Surface Mount
- Memory Size 4Gbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 95°C
- Voltage - Supply 1.35V
- Clock Frequency 800 MHz
- Memory Format DRAM
- Memory Interface Parallel
- Memory Organization 256M x 16
- DigiKey Programmable Not Verified
- REACH Status Vendor Undefined
- RoHS Status ROHS3 Compliant
