技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3.7A (Ta), 4.8A (Tc)
• Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
• Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package SOT-23-3 (TO-236)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)