技术参数

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 720mA (Ta)
• Rds On (Max) @ Id, Vgs 850mOhm @ 720mA, 10V
• Power Dissipation (Max) 420mW (Ta), 4.2W (Tc)
• Vgs(th) (Max) @ Id 2.6V @ 250µA
• Supplier Device Package DFN1110D-3
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±16V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 0.92 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 30 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant