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产品型号
2SB601-AZ
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品牌
Renesas
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RoHS
No
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描述
2SB601 - PNP SILICON EPITAXIAL T
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分类
单双极晶体管
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PDF
技术参数
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Package / Case
TO-220-3
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Mounting Type
Through Hole
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Transistor Type
PNP - Darlington
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Operating Temperature
150°C (TJ)
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Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
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Current - Collector Cutoff (Max)
10µA
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DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A, 2V
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Supplier Device Package
TO-220AB
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Current - Collector (Ic) (Max)
5 A
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Voltage - Collector Emitter Breakdown (Max)
100 V
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Power - Max
1.5 W
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ECCN
EAR99
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HTSUS
8541.29.0095
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REACH Status
REACH Unaffected
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RoHS Status
RoHS non-compliant
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