技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max) 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V
• Frequency - Transition 60MHz
• Current - Collector (Ic) (Max) 1.5 A
• Voltage - Collector Emitter Breakdown (Max) 80 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.21.0075
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant