技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 21A (Tc)
• Rds On (Max) @ Id, Vgs 400mOhm @ 10A, 10V
• Power Dissipation (Max) 3W (Ta), 200W (Tc)
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Supplier Device Package TO-3P (MP-88)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0075
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant