技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
• Rds On (Max) @ Id, Vgs 5.7Ohm @ 200mA, 4V
• Power Dissipation (Max) 750mW (Ta)
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package TO-92
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
• Vgs (Max) ±10V
• Drain to Source Voltage (Vdss) 250 V
• Gate Charge (Qg) (Max) @ Vgs 3.7 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status RoHS non-compliant