技术参数

• Package / Case 8-PowerSOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5A (Tc)
• Rds On (Max) @ Id, Vgs 150mOhm @ 2.5A, 10V
• Power Dissipation (Max) 2W (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-PowerSOP
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant