技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11A (Ta)
• Rds On (Max) @ Id, Vgs 15mOhm @ 5.5A, 10V
• Power Dissipation (Max) 2W (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-SOP
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0075
• REACH Status Vendor Undefined
• RoHS Status RoHS non-compliant