技术参数

• Package / Case 4-PowerTSFN
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 33A (Tc)
• Rds On (Max) @ Id, Vgs 65mOhm @ 16.4A, 10V
• Power Dissipation (Max) 195W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 860µA
• Supplier Device Package PG-VSON-4-1
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3288 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant