技术参数

• Package / Case 3-UFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 215mA (Ta)
• Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 5V
• Power Dissipation (Max) 700mW
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package X1-DFN1006-3
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 5V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 65 V
• Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 42 pF @ 30 V
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant