技术参数

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 60mA
• Current - Collector Cutoff (Max) 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V
• Frequency - Transition 112MHz
• Supplier Device Package 3-X2DFN (1x0.6)
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 166 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant