- 产品型号 SIR4606DP-T1-GE3
- 品牌 Vishay / Siliconix
- RoHS Yes
- 描述 N-CHANNEL 60 V (D-S) MOSFET POWE
- 分类 单 FET、MOSFET
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PDF
- 库存 11795
定价:
- 3000 0.5
- 6000 0.48
- 9000 0.45
技术参数
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 16A (Tc)
- Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V
- Power Dissipation (Max) 3.7W (Ta), 31.2W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
