- 产品型号 IPBE65R115CFD7AATMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 AUTOMOTIVE_COOLMOS PG-TO263-7
- 分类 单 FET、MOSFET
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PDF
- 库存 2500
定价:
- 1000 2.94
- 2000 2.77
技术参数
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Rds On (Max) @ Id, Vgs 115mOhm @ 9.7A, 10V
- Power Dissipation (Max) 114W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 490µA
- Supplier Device Package PG-TO263-7-11
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
