- 产品型号 PBSS5112PAP,115
- 品牌 NXP Semiconductors
- RoHS No
- 描述 NEXPERIA PBSS5112PAP - SMALL SIG
- 分类 双极晶体管阵列
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PDF
- 库存 36180
定价:
- 1 0.16
技术参数
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type 2 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 510mW
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 120V
- Vce Saturation (Max) @ Ib, Ic 480mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 190 @ 100mA, 2V
- Frequency - Transition 100MHz
- Supplier Device Package 6-HUSON (2x2)
- Grade Automotive
- Qualification AEC-Q101
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
