技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 25mA, 250mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
• Frequency - Transition 120MHz
• Supplier Device Package 3-NP
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 160 V
• Power - Max 700 mW
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected