- 产品型号 BUK6E4R0-75C,127
- 品牌 NXP Semiconductors
- RoHS No
- 描述 NEXPERIA BUK6E4R0-75C - 120A, 75
- 分类 单 FET、MOSFET
-
PDF
- 库存 21492
定价:
- 1 1.1
技术参数
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V
- Power Dissipation (Max) 306W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 1mA
- Supplier Device Package I2PAK
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±16V
- Drain to Source Voltage (Vdss) 75 V
- Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 15450 pF @ 25 V
- Qualification AEC-Q101
- Moisture Sensitivity Level (MSL) Vendor Undefined
- REACH Status REACH Unaffected
