- 产品型号 BAS116HYFHT116
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 DIODE GEN PURP 80V 215MA SOT23
- 分类 单二极管
- 库存 2375
定价:
- 3000 0.08
- 6000 0.08
- 9000 0.07
- 30000 0.07
- 75000 0.06
- 150000 0.06
技术参数
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Speed Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 3 µs
- Technology Standard
- Capacitance @ Vr, F 4pF @ 0V, 1MHz
- Current - Average Rectified (Io) 215mA
- Supplier Device Package SOT-23
- Operating Temperature - Junction 150°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 80 V
- Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
- Current - Reverse Leakage @ Vr 5 nA @ 75 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0070
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
