- 产品型号 BYV10MX-600PQ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS Yes
- 描述 DIODE GEN PURP 600V 10A TO220F
- 分类 单二极管
-
PDF
- 库存 13475
- 1 0.4
- 50 0.32
- 100 0.24
- 500 0.19
- 1000 0.16
技术参数
- Package / Case TO-220-2 Full Pack, Isolated Tab
- Mounting Type Through Hole
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 35 ns
- Technology Standard
- Current - Average Rectified (Io) 10A
- Supplier Device Package TO-220F
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 2 V @ 10 A
- Current - Reverse Leakage @ Vr 10 µA @ 600 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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