技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 115A (Tc)
• Rds On (Max) @ Id, Vgs 5.2mOhm @ 9.8A, 10V
• Power Dissipation (Max) 3.4W (Ta), 104W (Tc)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type UX)
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6855 pF @ 20 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant