• 库存 9257
定价:
  • 1000 3.3

技术参数

  • Technology GaNFET (Gallium Nitride)
  • FET Type N-Channel
  • Vgs (Max) +6V, -4V
  • Drain to Source Voltage (Vdss) 40 V
  • ECCN EAR99
  • HTSUS 8541.29.0040
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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