• 库存 1500
定价:
  • 1 18.36
  • 30 14.86
  • 120 13.99
  • 510 12.67

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 220A (Tc)
  • Rds On (Max) @ Id, Vgs 5.5mOhm @ 110A, 10V
  • Power Dissipation (Max) 800W (Tc)
  • Vgs(th) (Max) @ Id 4.5V @ 250µA
  • Supplier Device Package ISO TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 200 V
  • Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 25 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE GEN PURP 300V 60A TO247

库存: 1530

  • 1: 6.38
  • 30: 5.06
  • 120: 4.33
  • 510: 3.85
  • 1020: 3.3
  • 2010: 3.11

MOSFET 650V NCH SIC TRENCH

库存: 1851

  • 1: 20.5
  • 30: 16.6
  • 120: 15.62
  • 510: 14.16

MOSFET N-CH 200V 182A TO247AC

库存: 2190

  • 1: 9.5
  • 25: 7.59
  • 100: 6.79
  • 500: 5.99
  • 1000: 5.39

MOSFET N-CH 250V 170A TO247

库存: 1500

  • 1: 20.31
  • 30: 16.44
  • 120: 15.47
  • 510: 14.02

MOSFET N-CH 200V 220A TO268HV

库存: 3110

  • 1: 20.61
  • 30: 17.08
  • 120: 16.02
  • 510: 13.67

MOSFET N-CH 300V 210A PLUS247-3

库存: 1500

  • 1: 33.03
  • 30: 27.38
  • 120: 25.67

DIODE GEN PURP 600V 30A TO247AD

库存: 2000

  • 1: 2.76
  • 25: 2.22
  • 100: 1.83
  • 500: 1.55
  • 1000: 1.31
  • 2000: 1.25
  • 5000: 1.2
Top