• 库存 2089
定价:
  • 1 5.29

技术参数

  • Package / Case TO-247-2
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 361pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 15A
  • Supplier Device Package TO-247-2
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 1700 V
  • Voltage - Forward (Vf) (Max) @ If 1.8 V @ 5 A
  • Current - Reverse Leakage @ Vr 20 µA @ 1700 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE GEN PURP 2000V 3A DO201

库存: 3637

  • 1700: 0.18
  • 3400: 0.16
  • 5100: 0.15
  • 11900: 0.14
  • 42500: 0.14

SIC MOSFET N-CH 9A TO247-3

库存: 3028

  • 1: 7.21

DIODE SIL CARB 1.7KV 36A TO247-2

库存: 2850

  • 1: 11.13

DIODE SIL CARB 1.2KV 39A TO247-2

库存: 4669

  • 1: 7.15

DIODE SIL CARB 1.7KV 56A TO247-2

库存: 3851

  • 1: 18.01

DIODE SIL CARB 1.7KV 21A TO247-2

库存: 4041

  • 1: 5.54
  • 30: 4.39
  • 120: 3.76
  • 510: 3.35
  • 1020: 2.86
  • 2010: 2.7

DIODE SIL CARB 1.7KV 16A TO247-2

库存: 1963

  • 1: 9.28
  • 10: 7.95
  • 450: 5.85
  • 1350: 5.26
Top