技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max) 20µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
• Supplier Device Package Die
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 350 V
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant