- 产品型号 WNSC2D04650XQ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS Yes
- 描述 DIODE SIL CARBIDE 650V 4A TO220F
- 分类 单二极管
- 库存 4392
定价:
- 1 1.37
- 50 1.1
- 100 0.87
- 500 0.74
- 1000 0.6
- 2000 0.57
技术参数
- Package / Case TO-220-2 Full Pack, Isolated Tab
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 125pF @ 1V, 1MHz
- Current - Average Rectified (Io) 4A
- Supplier Device Package TO-220F
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
