- 产品型号 WNSC2D06650DJ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS Yes
- 描述 DIODE SIL CARBIDE 650V 6A DPAK
- 分类 单二极管
-
PDF
- 库存 13701
定价:
- 2500 0.77
- 5000 0.74
- 12500 0.71
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 198pF @ 1V, 1MHz
- Current - Average Rectified (Io) 6A
- Supplier Device Package DPAK
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
- Current - Reverse Leakage @ Vr 30 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
