技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
• Rds On (Max) @ Id, Vgs 70mOhm @ 2.1A, 4.5V
• Power Dissipation (Max) 340mW (Ta), 2.1W (Tc)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package TO-236AB
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 458 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant