- 产品型号 IAUC60N04S6N044ATMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 IAUC60N04S6N044ATMA1
- 分类 单 FET、MOSFET
-
PDF
- 库存 15597
定价:
- 5000 0.33
- 10000 0.31
- 25000 0.31
技术参数
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 4.52mOhm @ 30A, 10V
- Power Dissipation (Max) 42W (Tc)
- Vgs(th) (Max) @ Id 3V @ 14µA
- Supplier Device Package PG-TDSON-8
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1042 pF @ 25 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
