- 产品型号 SCTL35N65G2V
- 品牌 STMicroelectronics
- RoHS Yes
- 描述 TRANS SJT N-CH 650V PWRFLAT HV
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
- 3000 10.5
技术参数
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
- Power Dissipation (Max) 417W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package PowerFlat™ (8x8) HV
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
SILICON CARBIDE (SIC) MOSFET - 3
库存: 1809
- 3000: 6.32
SICFET N-CH 1200V 20A HIP247
库存: 1543
- 1: 19.5
- 30: 15.79
- 120: 14.86
- 510: 13.47
SICFET N-CH 650V 38A TO263-7
库存: 2689
- 1000: 10.75
SICFET N-CH 650V 95A H2PAK-7
库存: 1500
- 1000: 22.48
SICFET N-CH 650V 45A H2PAK-7
库存: 3204
- 1000: 9.75
SICFET N-CH 650V 45A H2PAK-7
库存: 1500
- 1000: 10.16
SILICON CARBIDE POWER MOSFET 120
库存: 1500
- 1000: 12.35
SILICON CARBIDE POWER MOSFET 650
库存: 4240
- 3000: 22.54
SICFET N-CH 650V 45A HIP247
库存: 1500
- 1: 17.6
- 30: 14.25
- 120: 13.41
- 510: 12.16
TRANS SJT N-CH 1200V 91A HIP247
库存: 1500
- 1: 43.75
- 30: 36.66
- 120: 34.22
