技术参数

• Package / Case PowerPAK® SO-8
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 46A (Tc)
• Rds On (Max) @ Id, Vgs 19.3mOhm @ 10A, 10V
• Power Dissipation (Max) 5W (Ta), 73.5W (Tc)
• Vgs(th) (Max) @ Id 2.6V @ 250µA
• Supplier Device Package PowerPAK® SO-8
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 80 V
• Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 40 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)