技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 45A (Ta), 236A (Tc)
• Rds On (Max) @ Id, Vgs 2mOhm @ 90A, 10V
• Power Dissipation (Max) 9W (Ta), 255W (Tc)
• Vgs(th) (Max) @ Id 4V @ 520µA
• Supplier Device Package 8-TDFNW (8.3x8.4)
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6305 pF @ 50 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant