技术参数

• Package / Case 4-PowerTSFN
• Mounting Type Surface Mount
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 866pF @ 1V, 100kHz
• Current - Average Rectified (Io) 23.4A
• Supplier Device Package 4-PQFN (8x8)
• Operating Temperature - Junction -55°C ~ 175°C
• Voltage - DC Reverse (Vr) (Max) 650 V
• Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
• Current - Reverse Leakage @ Vr 40 µA @ 650 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant