技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 12.1A (Ta), 101A (Tc)
• Rds On (Max) @ Id, Vgs 7.3mOhm @ 62A, 10V
• Power Dissipation (Max) 2.4W (Ta), 166W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 342µA
• Supplier Device Package TO-220
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 4250 pF @ 75 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant