• 库存 2399
定价:
  • 1 30.62
  • 30 25.39
  • 120 23.8

技术参数

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 46A (Tc)
  • Rds On (Max) @ Id, Vgs 84mOhm @ 20A, 15V
  • Power Dissipation (Max) 221W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 5mA
  • Supplier Device Package TO-247-4L
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Vgs (Max) +22V, -8V
  • Drain to Source Voltage (Vdss) 900 V
  • Gate Charge (Qg) (Max) @ Vgs 87 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 450 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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