技术参数

• Package / Case SOT-227-4, miniBLOC
• Mounting Type Chassis Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 31A (Tc)
• Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
• Power Dissipation (Max) 143W (Tc)
• Vgs(th) (Max) @ Id 2.8V @ 1mA
• Supplier Device Package SOT-227 (ISOTOP®)
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +23V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 64 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant