技术参数

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 56A (Tc)
• Rds On (Max) @ Id, Vgs 41mOhm @ 25A, 18V
• Power Dissipation (Max) 300W (Tc)
• Vgs(th) (Max) @ Id 5.7V @ 11.5mA
• Supplier Device Package PG-TO263-7-12
• Vgs (Max) +18V, -15V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant