技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
• Rds On (Max) @ Id, Vgs 9mOhm @ 12.5A, 10V
• Power Dissipation (Max) 2.5W (Ta)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) +30V, -20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2659 pF @ 20 V
• ECCN EAR99
• HTSUS 8541.29.0095