技术参数

• Package / Case 3-UDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V
• Frequency - Transition 140MHz
• Supplier Device Package DFN2020D-3
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 420 mW
• ECCN EAR99
• HTSUS 8541.29.0075