技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 1V
• Frequency - Transition 280MHz
• Supplier Device Package TO-92
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 500 mW
• ECCN EAR99
• HTSUS 8541.21.0075