技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2V @ 30mA, 1.5A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA, 2V
• Frequency - Transition 120MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8542.39.0001