技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
• Frequency - Transition 150MHz
• Supplier Device Package SOT-223
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 650 mW
• ECCN EAR99
• HTSUS 8541.29.0075