技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A, 2V
• Frequency - Transition 75MHz
• Supplier Device Package SOT-223-4
• Current - Collector (Ic) (Max) 4 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 1.2 W
• ECCN EAR99
• HTSUS 8542.39.0001